In-situ monitoring of GaAs MBE by low-energy ion scattering

Minoru Kubo; Tadashi Narusawa

doi:10.1117/12.56927

1 February 1992 In-situ monitoring of GaAs MBE by low-energy ion scattering

Minoru Kubo, Tadashi Narusawa

Proceedings Volume 1593, Dry Etch Technology; (1992) https://doi.org/10.1117/12.56927
Event: Microelectronic Processing Integration, 1991, San Jose, CA, United States

Abstract

We have applied Low Energy Ion Scattering(LEIS) to study initial stage of molecular beam epitaxy(MBE), which is highly sensitive to local atomic structures of the substrate surface. By demonstrating the sensitivity of the new monitor to atomic steps on the substrate surface, we demonstrate its usefulness for analyses of dynamical surface defect processes. We observe a characteristic variation of He+ scattering intensity with respect to the incident angles of primary ions to the substrate surface, and also find a correlation among the transition of growth process, the strain at growth interface and the surface flatness.

Citation Download Citation

Minoru Kubo and Tadashi Narusawa "In-situ monitoring of GaAs MBE by low-energy ion scattering", Proc. SPIE 1593, Dry Etch Technology, (1 February 1992); https://doi.org/10.1117/12.56927

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