Study of relationship between silylated profile and resist profile through variation in the process condition and resist materials in the DESIRE process

Kazuo Taira; Junichi Takahashi; Kazunori Kato; Kenji Yanagihara

doi:10.1117/12.56919

1 February 1992 Study of relationship between silylated profile and resist profile through variation in the process condition and resist materials in the DESIRE process

Kazuo Taira, Junichi Takahashi, Kazunori Kato, Kenji Yanagihara

Author Affiliations +

Proceedings Volume 1593, Dry Etch Technology; (1992) https://doi.org/10.1117/12.56919
Event: Microelectronic Processing Integration, 1991, San Jose, CA, United States

Abstract

This paper describes the effect of process condition on the resist profile in the DESIRE process[l,2] ,which is one of the surface imaging process, has some advantages compared with conventional photo lithography process. In our previous study on the resist profile, it was indicated that pattern formation was strongly depended on the silylated layer and the degree of sidewall protection during dry-development[3]. Then, we studied the effect of sidewall protection under various process factors such as soft-bake, silylation, and various resist materials. From the results of the study, it was found that the degree of sidewall protection could be controlled by the process conditions, attributed to silylated profile and the degree of silylation. Clear tendency that silylated profile leaving a trail gave a vertical sidewall profile was observed. Furthermore, it was found that silicon dioxide was observed on the sidewall surface of resist pattern by Micro Auger Electron Spectroscopy. The silicon dioxide seems to act as an inhibiting layer for lateral etching during Oxygen RLE. We will also report the mechanism consideration of sidewall protection during dry-development. Consequently, through the whole process optimization, 0.3?m L/S resist pattern resolution and 1.4?m wide focus range at 0.36?m L/S with a thickness 1.2?m are successfully obtained even in a single layer using i-line stepper with NA 0.50.

Citation Download Citation

Kazuo Taira, Junichi Takahashi, Kazunori Kato, and Kenji Yanagihara "Study of relationship between silylated profile and resist profile through variation in the process condition and resist materials in the DESIRE process", Proc. SPIE 1593, Dry Etch Technology, (1 February 1992); https://doi.org/10.1117/12.56919

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