In-process thin film thickness measurement and control

Steven A. Henck

doi:10.1117/12.56635

1 January 1992 In-process thin film thickness measurement and control

Steven A. Henck

Proceedings Volume 1594, Process Module Metrology, Control and Clustering; (1992) https://doi.org/10.1117/12.56635
Event: Microelectronic Processing Integration, 1991, San Jose, CA, United States

Abstract

An in-situ ellipsometer was used to provide real-time thickness measurements and control of process end point during plasma etching of silicon dioxide. In-situ ellipsometer thickness values were obtained at intervals of 0.15 seconds. The measured thickness was used to determine end point to obtain a desired film thickness. The oxide films etched using in-process ellipsometer control had a thickness accuracy and reproducibility of 3 A. In comparison, timed etching of silicon dioxide films in the same reactor, a thickness reproducibility of only 69 A was obtained.

Citation Download Citation

Steven A. Henck "In-process thin film thickness measurement and control", Proc. SPIE 1594, Process Module Metrology, Control and Clustering, (1 January 1992); https://doi.org/10.1117/12.56635

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