Surface reconstructions induced by submonolayers of tin on Si(111)

M. S. Worthington; J. L. Stevens; C. S. Chang; Ignatius S.T. Tsong

doi:10.1117/12.58175

1 May 1992 Surface reconstructions induced by submonolayers of tin on Si(111)

M. S. Worthington, J. L. Stevens, C. S. Chang, Ignatius S.T. Tsong

Proceedings Volume 1639, Scanning Probe Microscopies; (1992) https://doi.org/10.1117/12.58175
Event: OE/LASE '92, 1992, Los Angeles, CA, United States

Abstract

We report the use of the techniques of scanning tunneling microscopy and impact-collision ion scattering spectrometry to study the in-plane geometry of both the (root)3X(root)3 and 2(root)3X2(root)3 reconstructions of Sn on Si(111). For the (root)3X(root)3 reconstruction, the Sn adatoms were found to prefer fourfold atop (T₄) sites. For the 2(root)3X2(root)3 reconstruction, a two-layer epitaxial Sn model with a four-atom unit cell on the top layer is found to provide the best agreement with experimental data.

Citation Download Citation

M. S. Worthington, J. L. Stevens, C. S. Chang, and Ignatius S.T. Tsong "Surface reconstructions induced by submonolayers of tin on Si(111)", Proc. SPIE 1639, Scanning Probe Microscopies, (1 May 1992); https://doi.org/10.1117/12.58175

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