Fabrication of ultrahigh-quality vertical structures in GaAs

Mats Hagberg; Bjorn Jonsson; Anders G. Larsson

doi:10.1117/12.59777

1 June 1992 Fabrication of ultrahigh-quality vertical structures in GaAs

Mats Hagberg, Bjorn Jonsson, Anders G. Larsson

Proceedings Volume 1672, Advances in Resist Technology and Processing IX; (1992) https://doi.org/10.1117/12.59777
Event: Microlithography '92, 1992, San Jose, CA, United States

Abstract

Extremely high quality vertical structures, suitable for integrated optical components, have been fabricated in GaAs using electron beam lithography and chemically assisted ion beam etching. By using the directly exposed electron beam resist as etch-mask, all quality degrading intermediate pattern transfers were eliminated, resulting in high resolution and reproducibility. In order to obtain a vertical mask profile and high durability, pattern-corrected exposure and heat treatment of the electron beam resist was employed. The pattern correction of the resist exposure was studied using an exposure simulation program. The surface roughness of the etched facets was estimated from several SEM micrographs to be less than 20 nm.

Citation Download Citation

Mats Hagberg, Bjorn Jonsson, and Anders G. Larsson "Fabrication of ultrahigh-quality vertical structures in GaAs", Proc. SPIE 1672, Advances in Resist Technology and Processing IX, (1 June 1992); https://doi.org/10.1117/12.59777

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KEYWORDS

Etching

Ions

Scanning electron microscopy

Gallium arsenide

Photomicroscopy

Ion beams

Photomasks

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