Screened excitons between excited subbands in n-type modulation-doped quantum wells

Andre Bohomoletz Henriques

doi:10.1117/12.137595

3 September 1992 Screened excitons between excited subbands in n-type modulation-doped quantum wells

Andre Bohomoletz Henriques

Proceedings Volume 1675, Quantum Well and Superlattice Physics IV; (1992) https://doi.org/10.1117/12.137595
Event: Semiconductors '92, 1992, Somerset, NJ, United States

Abstract

A semi-analytical calculation of the screened exciton binding energies in modulation-doped quantum wells with one occupied subband is presented, whereby the finite thickness of the confined screening charge is included, giving good agreement with recent experimental reports. It is forecasted that in one-side doped quantum well, above a critical sheet carrier density, the exciton binding energy increases, as a consequence of the band-bending effect. Under an applied magnetic field the magneto-exciton binding energy increases very rapidly, which is compared to a much weaker field dependence in the undoped well.

Citation Download Citation

Andre Bohomoletz Henriques "Screened excitons between excited subbands in n-type modulation-doped quantum wells", Proc. SPIE 1675, Quantum Well and Superlattice Physics IV, (3 September 1992); https://doi.org/10.1117/12.137595

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