Al-Ga-In-As-P alloy system in low-pressure MOVPE

Dietmar A. Schmitz

doi:10.1117/12.137643

2 September 1992 Al-Ga-In-As-P alloy system in low-pressure MOVPE

Dietmar A. Schmitz

Proceedings Volume 1676, Advanced Semiconductor Epitaxial Growth Processes and Lateral and Vertical Fabrication; (1992) https://doi.org/10.1117/12.137643
Event: Semiconductors '92, 1992, Somerset, NJ, United States

Abstract

The growing request for advanced structures in the opto- and microelectronic field has led to the development of epitaxial growth techniques capable for atomic layer sharp transitions in crystal composition. A very important role under these techniques is played by the MOVPE. The deposition of semiconductor materials from metal-organyl complex compounds of group III elements and hydride compounds of group V elements has been refined by means of developments in reactor technology and improvement of the source materials. An exceptional improvement was reached by introducing reduced pressure operation of the described process. The present work is an overview of the process performance and optimization in Low Pressure MOVPE for a selection of compound semiconductors from the Al-Ga-In-As-P alloy system lattice matched to either InP or GaAs. Conventional sources are used to grow the materials from the described alloy system. The influence of various process parameters on important material properties are discussed.

Citation Download Citation

Dietmar A. Schmitz "Al-Ga-In-As-P alloy system in low-pressure MOVPE", Proc. SPIE 1676, Advanced Semiconductor Epitaxial Growth Processes and Lateral and Vertical Fabrication, (2 September 1992); https://doi.org/10.1117/12.137643

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