Buried heterostructure formation processes for high-performance devices

Alexei V. Syrbou

doi:10.1117/12.137651

2 September 1992 Buried heterostructure formation processes for high-performance devices

Alexei V. Syrbou

Proceedings Volume 1676, Advanced Semiconductor Epitaxial Growth Processes and Lateral and Vertical Fabrication; (1992) https://doi.org/10.1117/12.137651
Event: Semiconductors '92, 1992, Somerset, NJ, United States

Abstract

New AlGaAs buried heterostructure (BH) formation processes based on low temperature (T < 600 degree(s)C) in-situ mesa melt-etching and liquid phase epitaxial (LPE) regrowth have been studied and applied to the fabrication of BH laser diodes. It was shown that the BH formation process on Al_xGa_1-xAs laser structures with x equals 0.2...0.5 of cladding layers and masking stripes oriented along [011] or [011] on (100) planes depends on melt-etching rate anisotropy, while in a similar process for x > 0.6, or masking stripe orientations other than [011] or [011] the most important factors is the melt-etching material selectivity. Difficult AlGaAs nucleation on A-type planes is a distinct feature of LPE regrowth at temperatures lower than 600 degree(s)C. Low temperature melt-etching and regrowth produced single mode AlGaAs BH laser diodes emitting at 800 nm with the maximum optical power of 120 mW at 106 mA.

Citation Download Citation

Alexei V. Syrbou "Buried heterostructure formation processes for high-performance devices", Proc. SPIE 1676, Advanced Semiconductor Epitaxial Growth Processes and Lateral and Vertical Fabrication, (2 September 1992); https://doi.org/10.1117/12.137651

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