Exciton dynamics in 121A GaAs and GaAsP QWs having different valence band structures arising from built-in biaxial stress

Yoshihiro Takiguchi; Kai Shum; Robert R. Alfano; Emil S. Koteles; Dan C. Bertolet; Kei May Lau

doi:10.1117/12.137685

21 October 1992 Exciton dynamics in 121A GaAs and GaAsP QWs having different valence band structures arising from built-in biaxial stress

Yoshihiro Takiguchi, Kai Shum, Robert R. Alfano, Emil S. Koteles, Dan C. Bertolet, Kei May Lau

Author Affiliations +

Proceedings Volume 1677, Ultrafast Lasers Probe Phenomena in Semiconductors and Superconductors; (1992) https://doi.org/10.1117/12.137685
Event: Semiconductors '92, 1992, Somerset, NJ, United States

Abstract

Exciton dynamics in various 121 angstroms single quantum wells (QWs): a AlGaAs/GaAs QW and two AlGaAs/GaAsP QWs, under different built-in biaxial tension, has been investigated using time resolved photoluminescence (PL) spectroscopy at 5 K. Heavy-hole (hh) and light-hole (lh) exciton formation times from free electron-hole pair, hh (lh) exciton to lh (hh) exciton inter-subband relaxation times, exciton localization times to interface islands, and localized exciton annihilation decay times in the strained and non-strained QWs have been determined by fitting the PL time profiles at the lowest emission energy with an analytical solution for the localized exciton population profile obtained by solving six level rate equations.

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Yoshihiro Takiguchi, Kai Shum, Robert R. Alfano, Emil S. Koteles, Dan C. Bertolet, and Kei May Lau "Exciton dynamics in 121A GaAs and GaAsP QWs having different valence band structures arising from built-in biaxial stress", Proc. SPIE 1677, Ultrafast Lasers Probe Phenomena in Semiconductors and Superconductors, (21 October 1992); https://doi.org/10.1117/12.137685

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