Femtosecond electron relaxation in InGaAs lattice matched to InP

David Cohen; Clifford R. Pollock

doi:10.1117/12.137677

21 October 1992 Femtosecond electron relaxation in InGaAs lattice matched to InP

David Cohen, Clifford R. Pollock

Proceedings Volume 1677, Ultrafast Lasers Probe Phenomena in Semiconductors and Superconductors; (1992) https://doi.org/10.1117/12.137677
Event: Semiconductors '92, 1992, Somerset, NJ, United States

Abstract

Carrier energy relaxation times have been measured in In_0.53Ga_0.47As grown by MBE on InP. Layer thicknesses from 0.5 to 3 microns have been studied. An NaCl color center laser using additive pulse modelocking supplied 150 femtosecond pulses with photon energies between 780 and 806 meV. These were used for time resolved optical saturation measurements near the 750 meV material bandgap. Carrier densities between 0.4 X 10¹⁸ and 5.7 X 10¹⁸ were achieved. Lifetimes of about 150 femtoseconds are reported. These are observed to decrease with increasing carrier density and with decreasing photon energy.

Citation Download Citation

David Cohen and Clifford R. Pollock "Femtosecond electron relaxation in InGaAs lattice matched to InP", Proc. SPIE 1677, Ultrafast Lasers Probe Phenomena in Semiconductors and Superconductors, (21 October 1992); https://doi.org/10.1117/12.137677

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