Raman and photoluminescence characterization of AlGaAs multiple-quantum-well structures formed by focused-ion-beam implantation

Howard E. Jackson; Ahn Goo Choo; Bernard L. Weiss; Joseph T. Boyd; Andrew J. Steckl; Peter Chen; Robert D. Burnham; Stephen C. Smith

doi:10.1117/12.60451

1 July 1992 Raman and photoluminescence characterization of AlGaAs multiple-quantum-well structures formed by focused-ion-beam implantation

Howard E. Jackson, Ahn Goo Choo, Bernard L. Weiss, Joseph T. Boyd, Andrew J. Steckl, Peter Chen, Robert D. Burnham, Stephen C. Smith

Author Affiliations +

Proceedings Volume 1678, Spectroscopic Characterization Techniques for Semiconductor Technology IV; (1992) https://doi.org/10.1117/12.60451
Event: Semiconductors '92, 1992, Somerset, NJ, United States

Abstract

Raman scattering and low temperature photoluminescence (PL) have been used to characterize conventional ion beam (CIB) and focused ion beam (FIB) implanted multiple quantum well (MQW) structures. Lattice damage induced by both CIB and FIB implantation is studied by analyzing the peak position and the lineshape of the Raman spectra. CIB and FIB induced lattice damage was similar at lower doses, but for the highest dose the FIB induced significantly larger damage. Following implantation and rapid thermal annealing, all samples are compositionally mixed. PL spectra suggest that CIB and FIB implanted samples with the lowest dose behave in a manner similar to a lightly compensated semiconductor.

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Howard E. Jackson, Ahn Goo Choo, Bernard L. Weiss, Joseph T. Boyd, Andrew J. Steckl, Peter Chen, Robert D. Burnham, and Stephen C. Smith "Raman and photoluminescence characterization of AlGaAs multiple-quantum-well structures formed by focused-ion-beam implantation", Proc. SPIE 1678, Spectroscopic Characterization Techniques for Semiconductor Technology IV, (1 July 1992); https://doi.org/10.1117/12.60451

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