Paper
2 December 1992 Linear AlGaAs/GaAs waveguide modulator at lambda = 1.32μm utilizing lateral mode interference
Charles T. Sullivan, Sayan D. Mukherjee, Edith Kalweit, Terry Marta, W. Tim Goldberg, Mary K. Hibbs-Brenner, B. Walterson, M. Nisa Khan
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Abstract
Optical modulators based on electrooptically-induced lateral mode interference in multimode AlGaAs/GaAs waveguides at lambda = 1.32 micron are investigated for high-frequency linear applications. The key design issue is achieving higher slope efficiency while maintaining significant linearity improvements over sinusoidal interference-based modulator designs. We report experimental results which demonstrate indirectly a reduction in intermodulation distortion of 48 dB compared to an ideal Mach-Zehnder interferometer.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Charles T. Sullivan, Sayan D. Mukherjee, Edith Kalweit, Terry Marta, W. Tim Goldberg, Mary K. Hibbs-Brenner, B. Walterson, and M. Nisa Khan "Linear AlGaAs/GaAs waveguide modulator at lambda = 1.32μm utilizing lateral mode interference", Proc. SPIE 1703, Optical Technology for Microwave Applications VI and Optoelectronic Signal Processing for Phased-Array Antennas III, (2 December 1992); https://doi.org/10.1117/12.138392
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Cited by 1 scholarly publication and 1 patent.
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KEYWORDS
Waveguides

Modulators

Electrodes

Intermodulation

Gallium arsenide

Signal attenuation

Electro optics

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