Positive Photoresists As Ion Implantation Masks

David J. Elliott

doi:10.1117/12.957191

17 July 1979 Positive Photoresists As Ion Implantation Masks

David J. Elliott

Proceedings Volume 0174, Developments in Semiconductor Microlithography IV; (1979) https://doi.org/10.1117/12.957191
Event: Developments in Semiconductor Microlithography IV, 1979, San Jose, United States

Abstract

The use of positive photoresists as ion implantation masks is considered in terms of processing advantage and specific applications. the relevant physical and functional properties are discussed with particular emphasis on thermal flow. Following the postbake study, ion implantation parameters are given, focusing on energy and dose ranges that facilitate complete and trouble-free resist removal. The use of new varian-extrion waycool stage for water cooling figure heavily here. Finally, the use of new positive photoresists for ion implantation mask in the future is reviewed.

Citation Download Citation

David J. Elliott "Positive Photoresists As Ion Implantation Masks", Proc. SPIE 0174, Developments in Semiconductor Microlithography IV, (17 July 1979); https://doi.org/10.1117/12.957191

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