Peak fringe scanning microscopy: submicron 3D measurement of semiconductor components

Paul C. Montgomery; Jean-Pierre Fillard

doi:10.1117/12.140772

5 February 1993 Peak fringe scanning microscopy: submicron 3D measurement of semiconductor components

Paul C. Montgomery, Jean-Pierre Fillard

Proceedings Volume 1755, Interferometry: Techniques and Analysis; (1993) https://doi.org/10.1117/12.140772
Event: San Diego '92, 1992, San Diego, CA, United States

Abstract

Phase shifting microscopy is a technique that has been successfully developed for performing surface metrology on optical and microelectronic materials. It has proved particularly well adapted to applications in which the samples are nearly flat, or in which the features are smaller than (lambda) /4 in height, giving angstrom vertical resolution. Because of the problems in phase unwrapping due to the cyclic nature of fringes, and the limited depth of field in high magnification work, it is not yet practically suited to shape measurement of semiconductor components where step height may be many microns. To overcome this problem we have developed a new technique, called Peak Fringe Stepping Microscopy (PFSM), which has a depth of field and a working height range of 15 micrometers , and up to 4 nm vertical resolution. A whole 3-D image can be built up or critical measurements at specific points can be made. The technique is based on white light interferometry combined with precise height stepping of the sample and image processing. Some examples of shape measurement are given in the analysis of various electro-optical and microelectronic structures.

Citation Download Citation

Paul C. Montgomery and Jean-Pierre Fillard "Peak fringe scanning microscopy: submicron 3D measurement of semiconductor components", Proc. SPIE 1755, Interferometry: Techniques and Analysis, (5 February 1993); https://doi.org/10.1117/12.140772

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