Characterization of degradation processes in MOS VLSI structures

Tomasz Brozek; Andrzej Jakubowski; Bogdan Majkusiak

doi:10.1117/12.131011

1 August 1992 Characterization of degradation processes in MOS VLSI structures

Tomasz Brozek, Andrzej Jakubowski, Bogdan Majkusiak

Proceedings Volume 1783, International Conference of Microelectronics: Microelectronics '92; (1992) https://doi.org/10.1117/12.131011
Event: International Conference on Microelectronics, 1992, Warsaw, Poland

Abstract

The detailed investigations of degradation processes, their characterization and understanding of mechanisms responsible for degradation is of great technological interest, both from the fabrication point of view, and as a long-term reliability concern. Some of the effects usually need investigation in the completed MOS transistor structure (hot carrier degradation, threshold voltage, and channel mobility deterioration), but others should be studied with the special test structures so that effects can be investigated independently (electromigration, radiation effects, oxide wear-out). The paper presents a review of problems related to reliability of VLSI ICs, degradation processes, and their characterization.

Citation Download Citation

Tomasz Brozek, Andrzej Jakubowski, and Bogdan Majkusiak "Characterization of degradation processes in MOS VLSI structures", Proc. SPIE 1783, International Conference of Microelectronics: Microelectronics '92, (1 August 1992); https://doi.org/10.1117/12.131011

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