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Etching of silicon has been examined in CBrF3 plasma in a wide pressure range (2 - 100 Pa). Optical emission of CBrF3 plasma was investigated in the visible range. Mass spectrometry was used for the studying of ion plasma composition and for the determination of the main etching products. Conditions for the high quality trenches were determined.
Yuri P. Baryshev,K. Sh. Isaev,I. E. Nikiphorov,Alexander A. Orlikovsky, andA. V. Sapozhnikov
"Etching of silicon in CBrF3: formation of deep trenches and plasma diagnostics", Proc. SPIE 1783, International Conference of Microelectronics: Microelectronics '92, (1 August 1992); https://doi.org/10.1117/12.131041
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Yuri P. Baryshev, K. Sh. Isaev, I. E. Nikiphorov, Alexander A. Orlikovsky, A. V. Sapozhnikov, "Etching of silicon in CBrF3: formation of deep trenches and plasma diagnostics," Proc. SPIE 1783, International Conference of Microelectronics: Microelectronics '92, (1 August 1992); https://doi.org/10.1117/12.131041