Microelectronic NH3 sensor on the base of poly-Si films

Fuad J. Kasimov; O. Negodenko; V. Mamikonova; S. Ragimov

doi:10.1117/12.131030

1 August 1992 Microelectronic NH₃ sensor on the base of poly-Si films

Fuad J. Kasimov, O. Negodenko, V. Mamikonova, S. Ragimov

Proceedings Volume 1783, International Conference of Microelectronics: Microelectronics '92; (1992) https://doi.org/10.1117/12.131030
Event: International Conference on Microelectronics, 1992, Warsaw, Poland

Abstract

The hybrid selective gas analyzers for NH₃ concentration control with sensitive elements such as poly-Si films and MOS-transistors with threshold voltage, depending on the hydrogenous concentration level, were worked out. Resistance-to-frequency transducers on the base of cascode circuits with intrinsic positive current feedback were fabricated.

Citation Download Citation

Fuad J. Kasimov, O. Negodenko, V. Mamikonova, and S. Ragimov "Microelectronic NH₃ sensor on the base of poly-Si films", Proc. SPIE 1783, International Conference of Microelectronics: Microelectronics '92, (1 August 1992); https://doi.org/10.1117/12.131030

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