Preparation and properties of InGaAsP/InP photodiodes

Jaroslav Kovac; Frantisek Uherek; Alexander Satka; Rudolf Srnanek; Jan Jakabovic; Martin Tomaska

doi:10.1117/12.130998

1 August 1992 Preparation and properties of InGaAsP/InP photodiodes

Jaroslav Kovac, Frantisek Uherek, Alexander Satka, Rudolf Srnanek, Jan Jakabovic, Martin Tomaska

Proceedings Volume 1783, International Conference of Microelectronics: Microelectronics '92; (1992) https://doi.org/10.1117/12.130998
Event: International Conference on Microelectronics, 1992, Warsaw, Poland

Abstract

The various layers of InGaAsP/InP heterostructures have been grown by LPE for PIN and SAM avalanche photodiodes working near 1300 nm. The electrical and optical properties were investigated. With simple run of LPE growth, the low dark current, low capacitance PIN photodiodes have been fabricated. For SAM structure, avalanche gain of M approximately equals 12 near breakdown voltage was measured.

Citation Download Citation

Jaroslav Kovac, Frantisek Uherek, Alexander Satka, Rudolf Srnanek, Jan Jakabovic, and Martin Tomaska "Preparation and properties of InGaAsP/InP photodiodes", Proc. SPIE 1783, International Conference of Microelectronics: Microelectronics '92, (1 August 1992); https://doi.org/10.1117/12.130998

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