InGaAs/AlGaAs strained quantum-well diode lasers

Christine A. Wang; Hong K. Choi; James N. Walpole; Emily S. Kintzer; Stephen R. Chinn; Dean Z. Tsang; John D. Woodhouse; Joseph P. Donnelly

doi:10.1117/12.141105

16 February 1993 InGaAs/AlGaAs strained quantum-well diode lasers

Christine A. Wang, Hong K. Choi, James N. Walpole, Emily S. Kintzer, Stephen R. Chinn, Dean Z. Tsang, John D. Woodhouse, Joseph P. Donnelly

Author Affiliations +

Proceedings Volume 1788, Sources and Detectors for Fiber Communications; (1993) https://doi.org/10.1117/12.141105
Event: Fibers '92, 1992, Boston, MA, United States

Abstract

The OMVPE growth and performance of graded-index separate-confinement heterostructure strained quantum-well InGaAs-AlGaAs diode lasers are reviewed. Broad-stripe lasers have exhibited J_th as low as 60 A cm^-2 for a cavity length L equals 1500 micrometers and differential quantum efficiency (eta) _d as high as 90% for L equals 300 micrometers . Similar heterostructures have been used to fabricate traveling wave amplifiers with a laterally tapered gain region that emit over 1 W cw in a nearly diffraction-limited spatial lobe at 0.98 micrometers , linear arrays of 200-micrometers -long uncoated ridge-waveguide lasers with average threshold currents of 4 mA and (eta) _d approximately 90%, and high-power broad-stripe lasers with power conversion efficiency exceeding 50% at 75 degree(s)C.

Citation Download Citation

Christine A. Wang, Hong K. Choi, James N. Walpole, Emily S. Kintzer, Stephen R. Chinn, Dean Z. Tsang, John D. Woodhouse, and Joseph P. Donnelly "InGaAs/AlGaAs strained quantum-well diode lasers", Proc. SPIE 1788, Sources and Detectors for Fiber Communications, (16 February 1993); https://doi.org/10.1117/12.141105

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