Development of controlling the self-bias voltage and its appraisal by means of estimating ion damages

Takeo Ohte; Makoto Goto; Minoru Sugawara

doi:10.1117/12.142912

16 April 1993 Development of controlling the self-bias voltage and its appraisal by means of estimating ion damages

Takeo Ohte, Makoto Goto, Minoru Sugawara

Proceedings Volume 1803, Advanced Techniques for Integrated Circuit Processing II; (1993) https://doi.org/10.1117/12.142912
Event: Microelectronic Processing '92, 1992, San Jose, CA, United States

Abstract

We focus on discussing a method to reduce the self-bias voltage and applying this method to a plasma etcher to improve reduction of ion damages. We have developed a technique that can reduce the self-bias voltage without disturbing the main plasma by using a supplemental electron flow from the powered electrode to the plasma through the sheath. We have concluded experimentally that the effects of the supplemental electron flow on the main plasma parameters is not serious and damage induced to films is reduced considerably. The experiments were carried out in an rf discharge chamber. It may be certain from the results that the disturbance on the plasma parameters created by the variable self-bias voltage is minimal. The damage to the films induced by its ion bombardment is reduced by approximately one-half, when the self-bias voltage was controlled from -120 V to -98 V.

Citation Download Citation

Takeo Ohte, Makoto Goto, and Minoru Sugawara "Development of controlling the self-bias voltage and its appraisal by means of estimating ion damages", Proc. SPIE 1803, Advanced Techniques for Integrated Circuit Processing II, (16 April 1993); https://doi.org/10.1117/12.142912

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