High-aspect-ratio trench etching

James A. Bondur; Ruth E. Bucknall; Fritz Redeker; Jim Su

doi:10.1117/12.142936

16 April 1993 High-aspect-ratio trench etching

James A. Bondur, Ruth E. Bucknall, Fritz Redeker, Jim Su

Proceedings Volume 1803, Advanced Techniques for Integrated Circuit Processing II; (1993) https://doi.org/10.1117/12.142936
Event: Microelectronic Processing '92, 1992, San Jose, CA, United States

Abstract

A high aspect ratio (> 15:1), sub-micron, deep capacitor trench process is demonstrated in an 8 inch Applied Materials P5000E magnetically enhanced reactive ion etcher (MERIE) using HBr/NF₃/He-O₂ chemistry. Through the insertion of ferro-magnetic sheet material into the pedestal, sub-micron trenches can be etched to depths greater than 10 micrometers , with etch rates > 6000 angstroms/min, uniformity < +/- 5%, profile uniformity 89 +/- 0.5 degree(s) and selectivity to oxide > 40:1. The importance of the wafer surface temperature on trench etch properties is established. Studies indicate that there is a threshold temperature below which the chosen recipe would need to be modified to produce satisfactory trenches.

Citation Download Citation

James A. Bondur, Ruth E. Bucknall, Fritz Redeker, and Jim Su "High-aspect-ratio trench etching", Proc. SPIE 1803, Advanced Techniques for Integrated Circuit Processing II, (16 April 1993); https://doi.org/10.1117/12.142936

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