GeSi infrared photodetectors grown by rapid thermal CVD

Bahram Jalali; Luis Naval; Anthony F. J. Levi; Pat G. Watson

doi:10.1117/12.142080

16 March 1993 GeSi infrared photodetectors grown by rapid thermal CVD

Bahram Jalali, Luis Naval, Anthony F. J. Levi, Pat G. Watson

Proceedings Volume 1804, Rapid Thermal and Laser Processing; (1993) https://doi.org/10.1117/12.142080
Event: Microelectronic Processing '92, 1992, San Jose, CA, United States

Abstract

Ge_xSi_1-x infrared detectors grown by Rapid Thermal CVD are demonstrated. External quantum efficiency of 7% at (lambda) equals 1.32 micrometers and eye-diagram at 1.5 Gbit/s are obtained for Ge_.29Si_.71 waveguide pin detectors. It is shown that external quantum efficiency is limited by fiber to waveguide coupling efficiency. These, along with system considerations suggest that with further improvements, such devices can be used in Si- based monolithic optoelectronic receivers.

Citation Download Citation

Bahram Jalali, Luis Naval, Anthony F. J. Levi, and Pat G. Watson "GeSi infrared photodetectors grown by rapid thermal CVD", Proc. SPIE 1804, Rapid Thermal and Laser Processing, (16 March 1993); https://doi.org/10.1117/12.142080

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