Effects of annealing on ZnS:TbF3 electroluminescent devices prepared by rf sputtering

Jiin Wen Li; Yan-Kuin Su; Meiso Yokoyama

doi:10.1117/12.131306

27 October 1992 Effects of annealing on ZnS:TbF₃ electroluminescent devices prepared by rf sputtering

Jiin Wen Li, Yan-Kuin Su, Meiso Yokoyama

Proceedings Volume 1815, Display Technologies; (1992) https://doi.org/10.1117/12.131306
Event: International Symposium on Optoelectronics in Computers, Communications, and Control, 1992, Hsinchu, Taiwan

Abstract

In this study, four kinds of samples have been prepared for investigating the effects of annealing. The active layer which has higher post-annealing temperature may have better crystallinity, but the effects of higher post-annealing temperature may do damage to the interface states. The degradation of ACTFEL devices may be caused by the lower conduction current passed the active layer.

Citation Download Citation

Jiin Wen Li, Yan-Kuin Su, and Meiso Yokoyama "Effects of annealing on ZnS:TbF₃ electroluminescent devices prepared by rf sputtering", Proc. SPIE 1815, Display Technologies, (27 October 1992); https://doi.org/10.1117/12.131306

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