Growth of Nd:GdLiF4 single crystals

Bruce H. T. Chai; J. Lefaucheur; Anh-Tuyet Pham

doi:10.1117/12.149269

21 July 1993 Growth of Nd:GdLiF4 single crystals

Bruce H. T. Chai, J. Lefaucheur, Anh-Tuyet Pham

Proceedings Volume 1863, Growth, Characterization, and Applications of Laser Host and Nonlinear Crystals II; (1993) https://doi.org/10.1117/12.149269
Event: OE/LASE'93: Optics, Electro-Optics, and Laser Applications in Scienceand Engineering, 1993, Los Angeles, CA, United States

Abstract

We report for the first time the growth of high quality single crystals of Nd doped GdLiF₄. We have revised the phase diagram of this system to search for optimum growth composition. The crystals were grown from a highly incongruent peritectic melt using the conventional weight-feed-back automatic diameter control Czoochralski puller. Higher Nd doping (up to 4%) was achieved and the lasing performance was encouraging. We believe that the crystal has the potential to be used for diode pumped miniature laser applications.

Citation Download Citation

Bruce H. T. Chai, J. Lefaucheur, and Anh-Tuyet Pham "Growth of Nd:GdLiF4 single crystals", Proc. SPIE 1863, Growth, Characterization, and Applications of Laser Host and Nonlinear Crystals II, (21 July 1993); https://doi.org/10.1117/12.149269

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