Backside coatings for back illuminated CCDs

Michael P. Lesser

doi:10.1117/12.148600

12 July 1993 Backside coatings for back illuminated CCDs

Michael P. Lesser

Proceedings Volume 1900, Charge-Coupled Devices and Solid State Optical Sensors III; (1993) https://doi.org/10.1117/12.148600
Event: IS&T/SPIE's Symposium on Electronic Imaging: Science and Technology, 1993, San Jose, CA, United States

Abstract

The optimization of back illuminated CCDs for low-light-level applications requires many process steps. One such step is the deposition of thin films on the freshly thinned backside surface. These films may consist of many layers depending on both the desired properties of the detector and on the backside charging mechanism. We describe our backside coating process which has been optimized for astronomical applications. After thinning, we first grow a thin silicon oxide film in a steam environment. Following oxidation we deposit an antireflection coating optimized for a particular wavelength. We may also deposit a thin film of platinum between these layers that acts to charge the backside. Using these thin film coatings we have been able to produce CCDs which reach silicon's theoretical maximum quantum efficiency over the 300 - 1000 nm wavelength region.

Citation Download Citation

Michael P. Lesser "Backside coatings for back illuminated CCDs", Proc. SPIE 1900, Charge-Coupled Devices and Solid State Optical Sensors III, (12 July 1993); https://doi.org/10.1117/12.148600

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