Analyzing simulated and measured optical scatter for semiconductor process verification

Richard H. Krukar; S. Sohail H. Naqvi; John Robert McNeil; Donald R. Hush; James E. Franke; Thomas M. Niemczyk; David Keller; Richard A. Gottscho; Avi Kornblit

doi:10.1117/12.144813

6 May 1993 Analyzing simulated and measured optical scatter for semiconductor process verification

Richard H. Krukar, S. Sohail H. Naqvi, John Robert McNeil, Donald R. Hush, James E. Franke, Thomas M. Niemczyk, David Keller, Richard A. Gottscho, Avi Kornblit

Author Affiliations +

Proceedings Volume 1907, Machine Vision Applications in Industrial Inspection; (1993) https://doi.org/10.1117/12.144813
Event: IS&T/SPIE's Symposium on Electronic Imaging: Science and Technology, 1993, San Jose, CA, United States

Abstract

We describe an experiment in which the etch depth of a diffraction grating is measured. A simulated experiment is used to develop and calibrate the measurement technique. A scatterometer was used to measure the diffraction patterns of a set of 5 wafers at 14 die locations. The estimator already developed is then used to find the etch depths at the 70 measured locations. Finally, a scanning force microscope is used as a reference method to validate the scatterometer measurements.

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Richard H. Krukar, S. Sohail H. Naqvi, John Robert McNeil, Donald R. Hush, James E. Franke, Thomas M. Niemczyk, David Keller, Richard A. Gottscho, and Avi Kornblit "Analyzing simulated and measured optical scatter for semiconductor process verification", Proc. SPIE 1907, Machine Vision Applications in Industrial Inspection, (6 May 1993); https://doi.org/10.1117/12.144813

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