Fabrication of x-ray masks with 0.15-um level two-dimensional patterns by using highly accurate FIB lithography

Shuji Fujiwara; Y. Yamaoka; M. Harada; Junichi Nishino; R. Yuasa; M. Inai; S. Suzuki; T. Tanaka; M. Morigami; Takeo Watanabe; Yoshio Yamashita

doi:10.1117/12.146535

24 June 1993 Fabrication of x-ray masks with 0.15-um level two-dimensional patterns by using highly accurate FIB lithography

Shuji Fujiwara, Y. Yamaoka, M. Harada, Junichi Nishino, R. Yuasa, M. Inai, S. Suzuki, T. Tanaka, M. Morigami, Takeo Watanabe, Yoshio Yamashita

Author Affiliations +

Proceedings Volume 1924, Electron-Beam, X-Ray, and Ion-Beam Submicrometer Lithographies for Manufacturing III; (1993) https://doi.org/10.1117/12.146535
Event: SPIE'S 1993 Symposium on Microlithography, 1993, San Jose, CA, United States

Abstract

A highly accurate focused ion beam (FIB) lithography and its application to the x-ray mask fabrication are discussed. The pattern delineation accuracy in FIB lithography was investigated by drawing various two-dimensional (2-D) test patterns. We could obtain 0.15 micrometers feature resist patterns on the heavy-metal layers of the x-ray mask substrate. FIB lithography suffers little proximity effect and thus various 2-D test patterns were obtained with small distortion. The FIB drawn patterns were precisely transferred into the W absorber layer by the time modulated etching technique. X-ray masks used for the evaluation of the pattern replication accuracy in synchrotron radiation lithography were successfully fabricated.

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Shuji Fujiwara, Y. Yamaoka, M. Harada, Junichi Nishino, R. Yuasa, M. Inai, S. Suzuki, T. Tanaka, M. Morigami, Takeo Watanabe, and Yoshio Yamashita "Fabrication of x-ray masks with 0.15-um level two-dimensional patterns by using highly accurate FIB lithography", Proc. SPIE 1924, Electron-Beam, X-Ray, and Ion-Beam Submicrometer Lithographies for Manufacturing III, (24 June 1993); https://doi.org/10.1117/12.146535

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