Advances in deep-UV processing using cluster tools

Gary C. Escher; Gary Tepolt; Robert D. Mohondro

doi:10.1117/12.154766

15 September 1993 Advances in deep-UV processing using cluster tools

Gary C. Escher, Gary Tepolt, Robert D. Mohondro

Proceedings Volume 1925, Advances in Resist Technology and Processing X; (1993) https://doi.org/10.1117/12.154766
Event: SPIE'S 1993 Symposium on Microlithography, 1993, San Jose, CA, United States

Abstract

Deep-UV laser lithography has shown the capability of supporting the manufacture of multiple generations of integrated circuits (ICs) due to its wide process latitude and depth of focus (DOF) for 0.2 micrometers to 0.5 micrometers feature sizes. This capability has been attained through improvements in deep-UV wide field lens technology, excimer lasers, steppers and chemically amplified, positive deep-UV resists. Chemically amplified deep-UV resists are required for 248 nm lithography due to the poor absorption and sensitivity of conventional novolac resists. The acid catalyzation processes of the new resists requires control of the thermal history and environmental conditions of the lithographic process. Work is currently underway at several resist vendors to reduce the need for these controls, but practical manufacturing solutions exist today. One of these solutions is the integration of steppers and resist tracks into a `cluster tool' or `Lithocell' to insure a consistent thermal profile for the resist process and reduce the time the resist is exposed to atmospheric contamination. The work here reports processing and system integration results with a Machine Technology, Inc (MTI) post-exposure bake (PEB) track interfaced with an advanced GCA XLS 7800 deep-UV stepper [31 mm diameter, variable NA (0.35 - 0.53) and variable sigma (0.3 - 0.74)].

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Gary C. Escher, Gary Tepolt, and Robert D. Mohondro "Advances in deep-UV processing using cluster tools", Proc. SPIE 1925, Advances in Resist Technology and Processing X, (15 September 1993); https://doi.org/10.1117/12.154766

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