Paper
8 August 1993 193-nm deep-UV lithography system using a line-narrowed ArF excimer laser
Bruce W. Smith, Malcolm C. Gower, Mark Westcott, Lynn F. Fuller
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Abstract
A small field refractive projection system for operation at the 193.3 nm wavelength of a spectrally narrowed ArF excimer laser is being constructed. The 1 mm field, 20X system operates with a variable objective lens numerical aperture from 0.30 to 0.60, variable partial coherence, and control over illumination fill and mask tilt. A 30 W maximum power ArF excimer laser has been spectrally line-narrowed through incorporation of tilted Fabry-Perot etalons into the laser cavity, allowing linewidths on the order of 7 cm-1 (26 pm) with one etalon and 0.5 cm-1 (2 pm) with two etalons. This work reports laser line narrowing and lens performance results. Simulations of aerial image intensity distributions from lens aberration data are presented for 0.25 and 0.20 micron geometry.
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Bruce W. Smith, Malcolm C. Gower, Mark Westcott, and Lynn F. Fuller "193-nm deep-UV lithography system using a line-narrowed ArF excimer laser", Proc. SPIE 1927, Optical/Laser Microlithography, (8 August 1993); https://doi.org/10.1117/12.150488
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CITATIONS
Cited by 1 scholarly publication.
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KEYWORDS
Fabry–Perot interferometers

Excimer lasers

Lithography

Modulation

Deep ultraviolet

Optical lithography

Photomasks

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