Fabrication of 0.1-um T-shaped gates by phase-shifting optical lithography

Hua-Yu Liu; Chung-yi Su; Nigel R. Farrar; Robert E. Gleason

doi:10.1117/12.150465

8 August 1993 Fabrication of 0.1-um T-shaped gates by phase-shifting optical lithography

Hua-Yu Liu, Chung-yi Su, Nigel R. Farrar, Robert E. Gleason

Proceedings Volume 1927, Optical/Laser Microlithography; (1993) https://doi.org/10.1117/12.150465
Event: SPIE'S 1993 Symposium on Microlithography, 1993, San Jose, CA, United States

Abstract

We have developed a method for patterning sub-micrometer gates with T-shaped cross sections, which may be applied to manufacture high performance field effect transistors (FETs). The technique employs two exposures at the KrF excimer laser wavelength (248 nm). The first exposure uses a phase-shifting mask to pattern 0.1 micrometers isolated spaces. The resist used for the second exposure absorbs the 248 nm radiation strongly enough to produce a profile suitable for lift-off patterning.

Citation Download Citation

Hua-Yu Liu, Chung-yi Su, Nigel R. Farrar, and Robert E. Gleason "Fabrication of 0.1-um T-shaped gates by phase-shifting optical lithography", Proc. SPIE 1927, Optical/Laser Microlithography, (8 August 1993); https://doi.org/10.1117/12.150465

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