Paper
15 November 1993 1152 x 64 time delay and integration visible imaging CCD with tin oxide gates
Eric S. Juergensen, John P. Ebner, Bron R. Frias, Arlene A. Santos, Robert Thomas Tacka, Alfred P. Turley
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Abstract
An 8 micrometers pixel 1152 X 64 stage time delay and integration scanning visible imaging CCD which uses transparent tin oxide gates has been fabricated. The tin oxide gates provide a front side illuminated device with a peak quantum efficiency of greater than 80%. The chip features forward and reverse scan, variable TDI and commandable pixel size by the use of aggregation wells. The 1152 detector columns are subdivided into 8 subchips of 144 detector columns each. Buried Channel Charge Handling Capacity (CHC) of 100 ke- and Charge Transfer Efficiency (CTE) of 0.99999 has been measured. It is designed to operate at variable scan rates up to 52,000 lines per second.
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Eric S. Juergensen, John P. Ebner, Bron R. Frias, Arlene A. Santos, Robert Thomas Tacka, and Alfred P. Turley "1152 x 64 time delay and integration visible imaging CCD with tin oxide gates", Proc. SPIE 1952, Surveillance Technologies and Imaging Components, (15 November 1993); https://doi.org/10.1117/12.161421
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Cited by 1 scholarly publication.
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KEYWORDS
Charge-coupled devices

Oxides

Tin

Quantum efficiency

Sensors

CCD image sensors

CCD cameras

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