Dependence of IR optical properties of bulk-doped silicon on carrier concentration

Shlomo Hava; Mark Auslender

doi:10.1117/12.151095

13 August 1993 Dependence of IR optical properties of bulk-doped silicon on carrier concentration

Shlomo Hava, Mark Auslender

Proceedings Volume 1972, 8th Meeting on Optical Engineering in Israel: Optoelectronics and Applications in Industry and Medicine; (1993) https://doi.org/10.1117/12.151095
Event: 8th Meeting in Israel on Optical Engineering, 1992, Tel Aviv, Israel

Abstract

The infrared optical constants (index of refraction and extinction coefficient) and reflectance of bulk-doped n-silicon are calculated for electron concentrations up to 10²¹ cm^-3. These calculations are based on generalized Drude-Lorentz form of dynamic dielectric function and current relaxation approach. A nonmonotonic behavior of IR absorption versus electron concentration is found. A connection between the theoretical results and available experimental data is discussed.

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Shlomo Hava and Mark Auslender "Dependence of IR optical properties of bulk-doped silicon on carrier concentration", Proc. SPIE 1972, 8th Meeting on Optical Engineering in Israel: Optoelectronics and Applications in Industry and Medicine, (13 August 1993); https://doi.org/10.1117/12.151095

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KEYWORDS

Silicon

Reflectivity

Doping

Scattering

Absorption

Optical properties

Optical engineering

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