Signal conditioning circuit between a-Si:H p-i-n photodetector and A/D converter

Yi Fang; Richard Y. Kwor

doi:10.1117/12.158582

15 October 1993 Signal conditioning circuit between a-Si:H p-i-n photodetector and A/D converter

Yi Fang, Richard Y. Kwor

Proceedings Volume 2022, Photodetectors and Power Meters; (1993) https://doi.org/10.1117/12.158582
Event: SPIE's 1993 International Symposium on Optics, Imaging, and Instrumentation, 1993, San Diego, CA, United States

Abstract

A CMOS charge-to-voltage converting circuit is designed. This circuit works with a hydrogenated amorphous silicon (a-SiH) p-i-n photodetector in either dc bias mode or charge- storage mode, converts the photo-charge of the detector into a voltage with a high linearity at 10 MHz, and eliminates the effect of the dark current. The modeling of the a-Si:H p-i-n photodetector in the two working modes is implemented using SPICE switches.

Citation Download Citation

Yi Fang and Richard Y. Kwor "Signal conditioning circuit between a-Si:H p-i-n photodetector and A/D converter", Proc. SPIE 2022, Photodetectors and Power Meters, (15 October 1993); https://doi.org/10.1117/12.158582

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