Optical study of lift-off multiple quantum well thin films under various types of thermally induced in-plane strain

Hongen Shen; Michael Wraback; Jagadeesh Pamulapati; Monica Alba Taysing-Lara; Weimin Zhou; Mitra B. Dutta; Yu Cun Lu; Haochung Kuo

doi:10.1117/12.176853

26 May 1994 Optical study of lift-off multiple quantum well thin films under various types of thermally induced in-plane strain

Hongen Shen, Michael Wraback, Jagadeesh Pamulapati, Monica Alba Taysing-Lara, Weimin Zhou, Mitra B. Dutta, Yu Cun Lu, Haochung Kuo

Author Affiliations +

Proceedings Volume 2141, Spectroscopic Characterization Techniques for Semiconductor Technology V; (1994) https://doi.org/10.1117/12.176853
Event: OE/LASE '94, 1994, Los Angeles, CA, United States

Abstract

Lift-off thin films of GaAs/AlGaAs multiple quantum wells (MQW) have been bonded to different transparent substrates that possess either direction-independent or direction-dependent thermal expansion. Duet to the differential thermal expansion between the thin film and the much thicker substrate, the MQW is under a thermally induced in-plane strain. By proper choice of the substrate crystallographic orientation and bonding temperature various forms of in-plane anisotropic strain have been realized. A detailed study of the anisotropy in the complex refractive index resulting from the in-plane anisotropic strain is presented. The electric field dependence of the anisotropic absorption and birefringence has also been studied.

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Hongen Shen, Michael Wraback, Jagadeesh Pamulapati, Monica Alba Taysing-Lara, Weimin Zhou, Mitra B. Dutta, Yu Cun Lu, and Haochung Kuo "Optical study of lift-off multiple quantum well thin films under various types of thermally induced in-plane strain", Proc. SPIE 2141, Spectroscopic Characterization Techniques for Semiconductor Technology V, (26 May 1994); https://doi.org/10.1117/12.176853

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