Ultrafast exciton dynamics in direct gap semiconductors

Jorn M. Hvam; John Erland; K.-H. Pantke

doi:10.1117/12.175910

6 May 1994 Ultrafast exciton dynamics in direct gap semiconductors

Jorn M. Hvam, John Erland, K.-H. Pantke

Proceedings Volume 2142, Ultrafast Phenomena in Semiconductors; (1994) https://doi.org/10.1117/12.175910
Event: OE/LASE '94, 1994, Los Angeles, CA, United States

Abstract

Dynamics of free and bound excitons in CdSe, localized excitons in CdSe_xS_1-x, and confined two-dimensional excitons in GaAs/AlGaAs quantum wells have been studied by degenerate four-wave mixing and light-induced grating experiments. In the coherent range, the dephasing of excitons has been determined as a function of temperature, density, and energy. For incoherent excitons, we have determined recombination lifetimes and diffusion coefficients. In particular, we have studied the mobility of excitons in CdSe_xS_1-x near the mobility edge. Quantum interferences are observed in the nonlinear signal from these exciton systems, and the nature of these four-wave mixing beats are being discussed.

Citation Download Citation

Jorn M. Hvam, John Erland, and K.-H. Pantke "Ultrafast exciton dynamics in direct gap semiconductors", Proc. SPIE 2142, Ultrafast Phenomena in Semiconductors, (6 May 1994); https://doi.org/10.1117/12.175910

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