Paper
2 May 1994 High-speed dual p-i-n photodiodes for optical coherent receivers
Josef G. Bauer, Eckhard Meissner, J. W. Walter, G. Ebbinghaus
Author Affiliations +
Abstract
A monolithically integrated planar dual InGaAs pin photodiode with a 3 dB bandwidth of 18 GHz has been fabricated for balanced optical coherent receiver application. The photodiodes are designed for front and backside butt-jointed fiber coupling. They exhibit a very low dark current of 10 pA at -10V, a capacitance of 85 fF and a responsivity of 1 A/W. After 4500 h operation no chip failure has occurred. High impedance front-end modules have been assembled with a 3 dB bandwidth of 8.9 GHz and a coupling efficiency of more than 90 percent (-0.5 dB).
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Josef G. Bauer, Eckhard Meissner, J. W. Walter, and G. Ebbinghaus "High-speed dual p-i-n photodiodes for optical coherent receivers", Proc. SPIE 2149, Technologies for Optical Fiber Communications, (2 May 1994); https://doi.org/10.1117/12.175272
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KEYWORDS
PIN photodiodes

Photodiodes

Indium gallium arsenide

Receivers

Resistance

Capacitance

Diodes

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