Paper
13 May 1994 Ion projection: the successor to optical lithography
Hans Loeschne, Gerhard Stengl, Ivan L. Berry, John N. Randall, John Charles Wolfe, Walter Finkelstein, Robert W. Hill, John Melngailis, Lloyd R. Harriott, Wilhelm H. Bruenger, L. M. Buchmann
Author Affiliations +
Abstract
Ion projection lithography (IPL) is analogous to an optical wafer stepper except the exposing photons have been replaced by high energy, light ions. In the IPL machine being developed by the Advanced Lithography Group (ALG), a silicon stencil mask is `illuminated' by a broad area beam of hydrogen or helium ions. The ions pass through stencil mask openings and enter a multi-electrode electrostatic lens system which projects a demagnified image of the stencil mask onto a resist coated wafer substrate. Demonstrated IPL performance is covered. Independent calculations of the novel ion-optical column of the ALG prototype tool show less than 15 nm distortion over a 20 mm X 20 mm field, and indicate that even larger fields are possible. This machine will utilize standard optical, off-axis, wafer alignment and a precision laser interferometer controlled X-Y-stage. This combined `pattern lock' will enable the ALG prototype to achieve overlay requirements necessary for 0.15 micrometers geometries. The Advanced Lithography Group project for constructing the prototype ion projector is discussed.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hans Loeschne, Gerhard Stengl, Ivan L. Berry, John N. Randall, John Charles Wolfe, Walter Finkelstein, Robert W. Hill, John Melngailis, Lloyd R. Harriott, Wilhelm H. Bruenger, and L. M. Buchmann "Ion projection: the successor to optical lithography", Proc. SPIE 2194, Electron-Beam, X-Ray, and Ion-Beam Submicrometer Lithographies for Manufacturing IV, (13 May 1994); https://doi.org/10.1117/12.175827
Lens.org Logo
CITATIONS
Cited by 3 scholarly publications.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Ions

Semiconducting wafers

Photomasks

Lithography

Distortion

Projection systems

Ion beams

RELATED CONTENT

Ion projection lithography
Proceedings of SPIE (September 01 1998)
Measures to achieve 20nm IPL stencil mask distortion
Proceedings of SPIE (August 16 2002)
Ion projection lithography for IC manufacturing
Proceedings of SPIE (April 23 1999)
The Paths To Subhalf-Micrometer Optical Lithography
Proceedings of SPIE (January 01 1988)

Back to Top