X-ray lithography processing at CXrL from beamline to quarter-micron NMOS devices

Ramez Nachman; Gong Chen; Michael T. Reilly; Gregory M. Wells; John P. Wallace; Hsin H. Li; Azalia A. Krasnoperova; Paul D. Anderson; Eric Brodsky; Eti Ganin; Stephen A. Campbell; James Welch Taylor; Franco Cerrina

doi:10.1117/12.175835

13 May 1994 X-ray lithography processing at CXrL from beamline to quarter-micron NMOS devices

Ramez Nachman, Gong Chen, Michael T. Reilly, Gregory M. Wells, John P. Wallace, Hsin H. Li, Azalia A. Krasnoperova, Paul D. Anderson, Eric Brodsky, Eti Ganin, Stephen A. Campbell, James Welch Taylor, Franco Cerrina

Author Affiliations +

Proceedings Volume 2194, Electron-Beam, X-Ray, and Ion-Beam Submicrometer Lithographies for Manufacturing IV; (1994) https://doi.org/10.1117/12.175835
Event: SPIE's 1994 Symposium on Microlithography, 1994, San Jose, CA, United States

Abstract

In this paper we present the activities at the Center for X-ray Lithography (CXrL) that are dedicated to applying x-ray lithography to 0.25 micrometers processing. We first present the results of optimizing the parameters of the x-ray resist, AZ-PF 514, to achieve 0.25 micron features with variations of less than 10%; second, we discuss the properties of an exposure station (ES3) that feeds the in-house built aligner; third, we present the novel in-house built Two State Aligner (TSA) and its ability to achieve < 32 nm registration error; fourth, we present a developed fabrication process that produces masks with the required membrane stress, optical transparency, and mask flatness; and finally, we present the integration of all the above subprocesses by showing preliminary results from the in-progress 0.25 micrometers NMOS device run. The requirements and results of each sub-process are discussed and judged according to the 0.25 micrometers error budget goals that were initially set for 1997.

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Ramez Nachman, Gong Chen, Michael T. Reilly, Gregory M. Wells, John P. Wallace, Hsin H. Li, Azalia A. Krasnoperova, Paul D. Anderson, Eric Brodsky, Eti Ganin, Stephen A. Campbell, James Welch Taylor, and Franco Cerrina "X-ray lithography processing at CXrL from beamline to quarter-micron NMOS devices", Proc. SPIE 2194, Electron-Beam, X-Ray, and Ion-Beam Submicrometer Lithographies for Manufacturing IV, (13 May 1994); https://doi.org/10.1117/12.175835

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