Paper
16 May 1994 Rearrangement of novolak resins
Author Affiliations +
Abstract
During the course of investigations into the synthesis of novolak resins for use in the microelectronics industry we have observed the rearrangement of the resin. Deeper investigation of this phenomenon has shown it to be a chain scission which leads to a rearrangement of the novolak structure. A possible mechanism is discussed.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
M. Dalil Rahman, Ralph R. Dammel, and Dana L. Durham "Rearrangement of novolak resins", Proc. SPIE 2195, Advances in Resist Technology and Processing XI, (16 May 1994); https://doi.org/10.1117/12.175382
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CITATIONS
Cited by 2 scholarly publications and 3 patents.
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KEYWORDS
Polymers

Oxygen

Polymer thin films

Magnesium

Microelectronics

Lithography

Photoresist materials

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