Quarter-micrometer i-line lithography using an alternating phase-shift mask

Hung-Eil Kim; YoungSik Kim; Chul-Seung Lee; Young-Mog Ham; Dong-Jun Ahn; Soo-Han Choi

doi:10.1117/12.175457

17 May 1994 Quarter-micrometer i-line lithography using an alternating phase-shift mask

Hung-Eil Kim, YoungSik Kim, Chul-Seung Lee, Young-Mog Ham, Dong-Jun Ahn, Soo-Han Choi

Proceedings Volume 2197, Optical/Laser Microlithography VII; (1994) https://doi.org/10.1117/12.175457
Event: SPIE's 1994 Symposium on Microlithography, 1994, San Jose, CA, United States

Abstract

Phase-shifting mask allows remarkable improvement of the resolution and depth of focus than is possible with conventional mask. In this paper, we examine the optimum coherence factor ((sigma) ) and numerical aperture (NA) by considering the process margins of conventional and alternating shifter L&S patterns on high NA i-line stepper and next we investigate the possibility to apply this optimum parameter in real devices of 0.25 micrometers - 0.35 micrometers design rules. We evaluate the process window, line and space duty ratio, CD difference by proximity effect, illumination uniformity, and neighboring linewidth variation with experimental and simulations including resist profile as well as aerial image. In this experiment, we obtained the DOF of 2.0 micrometers for 0.25 micrometers alternating shifter L&S with an optimum coherence factor on high NA i-line stepper and we can conclude that 256 Mb DRAM with 0.25 micrometers design rule could be printed with large DOF.

Citation Download Citation

Hung-Eil Kim, YoungSik Kim, Chul-Seung Lee, Young-Mog Ham, Dong-Jun Ahn, and Soo-Han Choi "Quarter-micrometer i-line lithography using an alternating phase-shift mask", Proc. SPIE 2197, Optical/Laser Microlithography VII, (17 May 1994); https://doi.org/10.1117/12.175457

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