Control over the process of laser annealing of semiconductors

Marian Kuzma; Maegorzata M. Pociask; Sheregii Eugen

doi:10.1117/12.203274

1 March 1995 Control over the process of laser annealing of semiconductors

Marian Kuzma, Maegorzata M. Pociask, Sheregii Eugen

Proceedings Volume 2202, Laser Technology IV: Research Trends, Instrumentation, and Applications in Metrology and Materials Processing; (1995) https://doi.org/10.1117/12.203274
Event: Laser Technology: Fourth Symposium, 1993, Szczecin, Poland

Abstract

A laser method of segregation of impurities or interstitial mercury atoms (IMA) in solid phase of Hg_0.8Cd_0.2Te (MCT) is presented. A theoretical model for this process also has been proposed. Equation for diffusion of impurities or IMA was completed by a term describing the influence of phonon flux on diffusion processes. Computer simulations of the laser annealing process point out possibilities of obtaining a sharp maximum of Hg concentration for appropriately chosen parameters of laser pulse. This was experimentally verified with MCT specimens annealed by a YAG:Nd³⁺ laser.

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Marian Kuzma, Maegorzata M. Pociask, and Sheregii Eugen "Control over the process of laser annealing of semiconductors", Proc. SPIE 2202, Laser Technology IV: Research Trends, Instrumentation, and Applications in Metrology and Materials Processing, (1 March 1995); https://doi.org/10.1117/12.203274

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