Dimensional Control And Profile Contouring Of Plasma Etched Polysilicon

Steven C. Selbrede

doi:10.1117/12.958624

5 September 1980 Dimensional Control And Profile Contouring Of Plasma Etched Polysilicon

Steven C. Selbrede

Proceedings Volume 0221, Developments in Semiconductor Microlithography V; (1980) https://doi.org/10.1117/12.958624
Event: Semiconductor Microlithography V, 1980, San Jose, United States

Abstract

Linewidth control and profile contouring of polysilicon by anisotropic plasma etching with Freon 115, (CC₁F₅), and Freon 115/oxygen gas mixtures were investigated utilizing an LFE model 1002-P plana plasma etcher with a laser interferometric endpoint detector. It was found that Freon 115 etches anisotropicly with a reentrant edge profile and good photoresist and Si0₂ etch selectivity. A slight amount of undercutting was observed with overetching and was found to be related to trace amounts of oxygen in the Freon 115 plasma discharge. Freon 115/oxygen mixtures were investigated. It was determined that the polysilicon etch rate and the degree of anisotropy depends strongly on the oxygen concentration. Various combinations of anisotropic/isotropic etch sequences were found to have useful polysilicon edge contouring properties.

Citation Download Citation

Steven C. Selbrede "Dimensional Control And Profile Contouring Of Plasma Etched Polysilicon", Proc. SPIE 0221, Developments in Semiconductor Microlithography V, (5 September 1980); https://doi.org/10.1117/12.958624

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