One-micrometer, radiation-hardened complementary metal oxide semiconductor for cryogenic analog applications

Imelda Groves; George A. Brown; G. Pollack; K. Green; Larry C. Dawson; Arvind I. D'Souza; Chih-Chia Lin; M. Song; C. Hwang; Jason C.S. Woo; Kenneth P. MacWilliams

doi:10.1117/12.178494

23 June 1994 One-micrometer, radiation-hardened complementary metal oxide semiconductor for cryogenic analog applications

Imelda Groves, George A. Brown, G. Pollack, K. Green, Larry C. Dawson, Arvind I. D'Souza, Chih-Chia Lin, M. Song, C. Hwang, Jason C.S. Woo, Kenneth P. MacWilliams

Author Affiliations +

Proceedings Volume 2226, Infrared Readout Electronics II; (1994) https://doi.org/10.1117/12.178494
Event: SPIE's International Symposium on Optical Engineering and Photonics in Aerospace Sensing, 1994, Orlando, FL, United States

Abstract

Results are presented of a process-development effort to achieve a 1-Mrad silicon (Si) radiation-hardening capability at temperatures down to 40 K, using Texas Instruments high volume, 1-micrometer commercial process. The one-micrometer process was characterized at 77 K and 40 K: radiation effects on the baseline SiO₂ gate dielectric and N-channel field effect transistor edges were observed, as were freeze-out and hot-carrier effects of the lightly doped drain implants. These freeze-out phenomena were confirmed, using SUPREM, MINIMOS, and MEDICI. The simulated data compared favorably with measured results. Simulations were run, using various implant doses and profiles to eliminate the freeze-out and hot-carrier effects in the new process. Devices having these simulated profiles were processed, and the results are presented.

Citation Download Citation

Imelda Groves, George A. Brown, G. Pollack, K. Green, Larry C. Dawson, Arvind I. D'Souza, Chih-Chia Lin, M. Song, C. Hwang, Jason C.S. Woo, and Kenneth P. MacWilliams "One-micrometer, radiation-hardened complementary metal oxide semiconductor for cryogenic analog applications", Proc. SPIE 2226, Infrared Readout Electronics II, (23 June 1994); https://doi.org/10.1117/12.178494

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available