Paper
13 July 1994 Scale-up of LPE processes for flexibility in manufacturing
Peter W. Norton, Paul LoVecchio, Guy P. Pultz, James Hughes, Timothy Robertson, Vince Lukach, Kwok Wong
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Abstract
Focal plane arrays fabricated in Hg1-xCdxTe have matured to the point where they are entering pilot production for military and civilian applications. Loral chose the p-on-n heterostructure photodiode architecture produced by a two step LPE process for production scale-up because of its demonstrated high performance over a broad range of cut-off wavelengths from approximately equals 4 micrometers to > 15 micrometers . To meet the manufacturing requirements of high throughput and flexibility, Loral has successfully scaled and transferred into production, both tellurium rich horizontal slider (for growth of the active n-type base layer) and mercury rich vertical dipping (for growth of the p-type cap layer) technologies. This approach capitalizes on the advantages of each process to maximize the producibility of LPE films in a manufacturing environment. This paper discusses the advantages of horizontal Te-rich growth. Production reactors have demonstrated excellent compositional uniformity (+/- 0.005 in x) over 24 cm2. Issues related to the scale-up of the equipment are discussed.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Peter W. Norton, Paul LoVecchio, Guy P. Pultz, James Hughes, Timothy Robertson, Vince Lukach, and Kwok Wong "Scale-up of LPE processes for flexibility in manufacturing", Proc. SPIE 2228, Producibility of II-VI Materials and Devices, (13 July 1994); https://doi.org/10.1117/12.179678
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Cited by 14 scholarly publications.
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KEYWORDS
Liquid phase epitaxy

Manufacturing

Mercury

Tellurium

Cadmium

Heterojunctions

Photodiodes

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