Transmission electrom microscopy (TEM) defect studies of molecular beam epitaxy (MBE) grown ZnSxSe1-x/GaAs interface

Li-Hsin Kuo; Lourdes Salamanca-Riba; G. E. Hofler; Bor-Jen Wu; Michael A. Haase

doi:10.1117/12.179653

13 July 1994 Transmission electrom microscopy (TEM) defect studies of molecular beam epitaxy (MBE) grown ZnS_xSe_1-x/GaAs interface

Li-Hsin Kuo, Lourdes Salamanca-Riba, G. E. Hofler, Bor-Jen Wu, Michael A. Haase

Author Affiliations +

Proceedings Volume 2228, Producibility of II-VI Materials and Devices; (1994) https://doi.org/10.1117/12.179653
Event: SPIE's International Symposium on Optical Engineering and Photonics in Aerospace Sensing, 1994, Orlando, FL, United States

Abstract

Both Shockley and Frank partial dislocations originating at the ZnS_xSe_1-x/GaAs interface were observed with defect densities in the range less than 5 X 10⁴/cm² to approximately 1 X 10⁸/cm² for samples grown under different conditions. These faulted defects act as heterogeneous nucleation sites for the generation of 60 degree(s) misfit dislocations. A very low density of Shockley partial dislocations was obtained in ZnS_xSe_1-x films grown by the layer-by-layer mode on GaAs substrates. Also, the density of Frank partial dislocations was decreased by exposing the As- stabilized GaAs surface to Zn for 1-2 minutes prior to the growth of the ZnS_xSe_1-x epilayers. These samples contained a defect density lower than 5 X 10⁴/cm². A Ga₂Se₃ compound existing at the ZnS_xSe_1-x/GaAs interface is thought to be the source of the Frank partial dislocations.

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Li-Hsin Kuo, Lourdes Salamanca-Riba, G. E. Hofler, Bor-Jen Wu, and Michael A. Haase "Transmission electrom microscopy (TEM) defect studies of molecular beam epitaxy (MBE) grown ZnS_xSe_1-x/GaAs interface", Proc. SPIE 2228, Producibility of II-VI Materials and Devices, (13 July 1994); https://doi.org/10.1117/12.179653

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