Analytic models and parametric investigations of IBE and RIE mechanisms for GaAs compounds

K. Ketata; Serge Koumetz; Mohamed Ketata; Roland Debrie

doi:10.1117/12.186057

9 September 1994 Analytic models and parametric investigations of IBE and RIE mechanisms for GaAs compounds

K. Ketata, Serge Koumetz, Mohamed Ketata, Roland Debrie

Proceedings Volume 2335, Microelectronics Technology and Process Integration; (1994) https://doi.org/10.1117/12.186057
Event: Microelectronic Manufacturing, 1994, Austin, TX, United States

Abstract

This work introduces a comprehensive analytic model of the sputtering mechanism present in ion beam etching and reactive ion etching processes. Our final objective is to correlate the etch rate to the plasma reactor parameters. Experimental verifications for GaAs etching show a good agreement for ion beam etching. In the case of reactive ion etching, the imperfect agreement is explained by the influence of effects such as flow rate and temperature not taken into account in the theoretical approach. We also present parametric investigations of GaAs etched in SiCl₄ plasma.

Citation Download Citation

K. Ketata, Serge Koumetz, Mohamed Ketata, and Roland Debrie "Analytic models and parametric investigations of IBE and RIE mechanisms for GaAs compounds", Proc. SPIE 2335, Microelectronics Technology and Process Integration, (9 September 1994); https://doi.org/10.1117/12.186057

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