Planar multilevel metallization technologies for ULSI devices

Zheng Xu; Ken Ngan; Jim VanGogh; Rod Mosely; Yoichiro Tanaka; H. Kieu; Fusen E. Chen; Ivo J. Raaijmakers

doi:10.1117/12.186046

9 September 1994 Planar multilevel metallization technologies for ULSI devices

Zheng Xu, Ken Ngan, Jim VanGogh, Rod Mosely, Yoichiro Tanaka, H. Kieu, Fusen E. Chen, Ivo J. Raaijmakers

Proceedings Volume 2335, Microelectronics Technology and Process Integration; (1994) https://doi.org/10.1117/12.186046
Event: Microelectronic Manufacturing, 1994, Austin, TX, United States

Abstract

Technologies are described which can completely fill contacts, vias and trenches with a PVD or CVD barrier metal film and a PVD Al-Cu plug. The presented processes are demonstrated to be applicable for contacts or vias having sizes down to 0.25 micrometers and aspect ratios of up to 5.

Citation Download Citation

Zheng Xu, Ken Ngan, Jim VanGogh, Rod Mosely, Yoichiro Tanaka, H. Kieu, Fusen E. Chen, and Ivo J. Raaijmakers "Planar multilevel metallization technologies for ULSI devices", Proc. SPIE 2335, Microelectronics Technology and Process Integration, (9 September 1994); https://doi.org/10.1117/12.186046

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