Characterization of deep-level defects and their connection with the performance of InxGa1-xAs/InP p-i-n photodiodes

Tatiana V. Torchinskaya; Volodya I. Kooshnirenko; Ludmila V. Shchedrina; Carla J. Miner

doi:10.1117/12.186795

16 September 1994 Characterization of deep-level defects and their connection with the performance of InxGa1-xAs/InP p-i-n photodiodes

Tatiana V. Torchinskaya, Volodya I. Kooshnirenko, Ludmila V. Shchedrina, Carla J. Miner

Author Affiliations +

Proceedings Volume 2336, Manufacturing Process Control for Microelectronic Devices and Circuits; (1994) https://doi.org/10.1117/12.186795
Event: Microelectronic Manufacturing, 1994, Austin, TX, United States

Abstract

The parameters of the deep centers in MOCVD In_0.53Ga_0.47As layers and their dependence on electric field value and device topology on the wafers were studied by DLTS method in In_0.53Ga_0.47As/InP p-i-n photodiodes. The two deep centers with the activation energy E_C -0.299 and 0.389 eV were discovered in depletion region of the p-i-n diodes. The latter defects are nonradiative recombination centers with strong electric field dependence of their activation energies and strong temperature dependence of the capture cross sections.

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Tatiana V. Torchinskaya, Volodya I. Kooshnirenko, Ludmila V. Shchedrina, and Carla J. Miner "Characterization of deep-level defects and their connection with the performance of InxGa1-xAs/InP p-i-n photodiodes", Proc. SPIE 2336, Manufacturing Process Control for Microelectronic Devices and Circuits, (16 September 1994); https://doi.org/10.1117/12.186795

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