Methods for parametric yield control for future 0.1-um deep submicron MOSFET manufacturing

Renate Sitte; Sima Dimitrijev; H. Barry Harrison

doi:10.1117/12.186790

16 September 1994 Methods for parametric yield control for future 0.1-um deep submicron MOSFET manufacturing

Renate Sitte, Sima Dimitrijev, H. Barry Harrison

Proceedings Volume 2336, Manufacturing Process Control for Microelectronic Devices and Circuits; (1994) https://doi.org/10.1117/12.186790
Event: Microelectronic Manufacturing, 1994, Austin, TX, United States

Abstract

A study to investigate systematic ways of controlling parametric yield for future production of deep submicron MOSFETs has been performed. It is important to know how and where in the manufacturing process the parametric yield can be controlled most efficiently, because for these devices no manufacturing expertise has yet been accumulated. Our study is based on a comparative sensitivity analysis, which has revealed that yield control techniques employed in micron size devices may not be efficient in deep submicron size devices, making a reorientation for manufacturing control mandatory.

Citation Download Citation

Renate Sitte, Sima Dimitrijev, and H. Barry Harrison "Methods for parametric yield control for future 0.1-um deep submicron MOSFET manufacturing", Proc. SPIE 2336, Manufacturing Process Control for Microelectronic Devices and Circuits, (16 September 1994); https://doi.org/10.1117/12.186790

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