Paper
12 October 1994 Room-temperature continuous wave emission of II-VI laser diodes
Masafumi Ozawa, Akira Ishibashi
Author Affiliations +
Proceedings Volume 2338, 1994 Topical Meeting on Optical Data Storage; (1994) https://doi.org/10.1117/12.190164
Event: Optical Data Storage '94, 1994, Dana Point, CA, United States
Abstract
ZnMgSSe is a suitable material for the cladding layer of II-VI compound laser diodes because both the bandgap energy and the lattice constant can be controlled. Furthermore, it is found that this material has good thermal stability. Both n-type and p-type ZnMgSSe have been successfully obtained, and showed good properties for fabricating laser diodes. Utilizing this novel material, we fabricated several laser structures. Recently, room temperature continuous wave operation was achieved with ZnCdSe/ZnSe/ZnMgSSe separate-confinement-heterostructure. A review of the recent progress of blue laser diodes fabricated in our laboratory and those fabricated by other research groups is presented.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Masafumi Ozawa and Akira Ishibashi "Room-temperature continuous wave emission of II-VI laser diodes", Proc. SPIE 2338, 1994 Topical Meeting on Optical Data Storage, (12 October 1994); https://doi.org/10.1117/12.190164
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KEYWORDS
Semiconductor lasers

Continuous wave operation

Cladding

Doping

Gallium arsenide

Refractive index

Pulsed laser operation

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